![]() ![]() Romanov, “ Gallium oxide: Properties and application-A review,” Rev. Recent progress and perspectives on epitaxial thin film growth, chemical and physical properties of defects and impurities, p-type doping, and ternary alloys with In 2O 3 and Al 2O 3 will be discussed. The purpose of this article is to provide a timely review on the fundamental understanding of the semiconductor physics and chemistry of Ga 2O 3 in terms of electronic band structures, optical properties, and chemistry of defects and impurity doping. However, many challenges remain, including the difficulty in p-type doping, a large density of unintentional electron carriers and defects/impurities, and issues with the device process (contact, dielectrics, and surface passivation), and so on. In the past few years, a significant process has been made for the growth of high-quality bulk crystals and thin films and device optimizations for power electronics and solar blind UV detection. These properties enable Ga 2O 3 a promising material for a large range of applications, such as high power electronic devices and solar-blind ultraviolet (UV) photodetectors. Gallium oxide (Ga 2O 3) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal stability. ![]()
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